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| MJL21195, MJL21196 Preferred Device Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. * Total Harmonic Distortion Characterized * High DC Current Gain - hFE = 25 Min @ IC = 8 Adc * Excellent Gain Linearity * High SOA: 2.50 A, 80 V, 1 Second * Epoxy Meets UL 94, V-0 @ 0.125 in * ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V * Pb-Free Packages are Available* MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 200 1.43 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C xxxx A WL, L YY, Y WW, W G = 21195 or 21196 = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package TO-264 CASE 340G STYLE 2 MJLxxxx AYYWWG http://onsemi.com 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC Max 0.7 Unit C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 June, 2005 - Rev. 3 1 Publication Order Number: MJL21195/D MJL21195, MJL21196 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS (Note 2) Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) OFF CHARACTERISTICS (Note 3) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN (Note 3) Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (Nonrepetitive) (VCE = 80 Vdc, t = 1 s (Nonrepetitive) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS (Note 3) Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 TJ = 25C ftest = 1 MHz VCE = 5 V VCE = 10 V hFE unmatched hFE matched THD - - fT Cob 4 - 0.8 0.08 - - - - - 500 MHz pF % hFE 25 8.0 - - - - 100 - 2.2 Vdc Vdc IS/b 4.0 2.25 - - - - Adc IEBO ICEX - - - - 100 100 mAdc mAdc VCEO(sus) ICEO 250 - - - - 100 Vdc mAdc Symbol Min Typical Max Unit VBE(on) VCE(sat) - - - - 1.4 4 PNP MJL21195 F T, CURRENT BANDWIDTH PRODUCT (MHz) 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 NPN MJL21196 VCE = 10 V F T, CURRENT BANDWIDTH PRODUCT (MHz) VCE = 5 V TJ = 25C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJL21195, MJL21196 TYPICAL CHARACTERISTICS PNP MJL21195 1000 1000 NPN MJL21196 h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 10 10 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJL21195 1000 1000 NPN MJL21196 100 TJ = 100C 25C -25 C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 10 10 Figure 5. DC Current Gain, VCE = 5 V PNP MJL21195 30 IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 25 20 15 10 5.0 0 TJ = 25C 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 25 2.0 A 1.5 A 1.0 A IB = 0.5 A 30 25 20 15 10 5.0 0 0 Figure 6. DC Current Gain, VCE = 5 V NPN MJL21196 2.0 A 1.5 A 1.0 A IB = 0.5 A TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 25 Figure 7. Typical Output Characteristics http://onsemi.com 3 Figure 8. Typical Output Characteristics MJL21195, MJL21196 TYPICAL CHARACTERISTICS PNP MJL21195 3.0 SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 VCE(sat) 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 VBE(sat) SATURATION VOLTAGE (VOLTS) TJ = 25C IC/IB = 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) TJ = 25C IC/IB = 10 VBE(sat) NPN MJL21196 1.0 10 IC, COLLECTOR CURRENT (A) 100 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJL21195 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C NPN MJL21196 1.0 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 100 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage 100 IC , COLLECTOR CURRENT (AMPS) 10 ms 10 1 Sec 50 ms 1.0 250 ms 0.1 1.0 10 100 1000 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJL21195, MJL21196 10000 Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 Cib 1000 Cob TJ = 25C ftest = 1 MHz 100 0.1 1.0 10 100 1000 TJ = 25C ftest = 1 MHz 100 0.1 1.0 Cob 10 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJL21195 Typical Capacitance Figure 15. MJL21196 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT 8.0 W -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 MJL21195, MJL21196 ORDERING INFORMATION Device MJL21195 MJL21195G MJL21196 MJL21196G Package TO-264 TO-264 (Pb-Free) TO-264 TO-264 (Pb-Free) Shipping 25 Units / Rail 25 Units / Rail 25 Units / Rail 25 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MJL21195, MJL21196 PACKAGE DIMENSIONS TO-3BPL (TO-264) CASE 340G-02 ISSUE J Q -B- U A R 1 2 3 0.25 (0.010) M TB M -T- C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 N L P K F 2 PL W G D 3 PL 0.25 (0.010) M J H TB S DIM A B C D E F G H J K L N P Q R U W STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER http://onsemi.com 7 MJL21195, MJL21196 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJL21195/D |
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